Nanowerk

Holes in silicon are heavier than expected - solving a mystery in quantum electronics

Physicists found why holes move slower than electrons in silicon: not defects, but higher intrinsic mass, supporting ...
blockchain

GPT-5.2 Pro Reported to Solve Erdős Problem 281; Traders Track AI Crypto Tokens RNDR, FET, AGIX

According to @gdb, GPT-5.2 Pro was used by Neel Somani to solve a second open Erdős problem, specifically problem number 281, with no prior solutions found, source: X post by @gdb on Jan 18, 2026 and ...
IEEE

Failure Mechanism Analysis of 1.2 kV SiC MOSFETs Under Low-Temperature Storage, Power Cycling, and Short-Circuit Interactions

Abstract: The silicon carbide (SiC) metal oxide semiconductor field effect transistors (MOSFETs) under real-world operating conditions contends with multistress scenarios, involving thermal, ...
IEEE

Behavior of Split-Gate Trench MOSFETs in Critical Conditions Caused by Distributed Effects

Abstract: The split-gate trench (SGT) MOSFET is a vertical power device having a separate field plate (FP) inside a deep trench. This design increases the breakdown voltage (BV) via the reduced ...