A Japanese collaboration dominated by engineers from Meijo University claims to have delivered significant advances in the ...

Clas-SiC benefits, not just through the licence fee and the royalty payments, but through the capacity we will get in that fab. Part of the agreement is that we get 15 percent capacity in that ...

The RF GaN defense market, valued at US$592 million in 2025, is expected to reach US$1 billion by 2031, growing at a 10% CAGR. Growth is driven by the increasing deployment of GaN-based solid-state RF ...

CMK strengthens its analytical leadership with the acquisition of a third state-of-the-art mass spectrometer.

In 2025, the geographical breakdown of annual revenue evolved as follows: Europe, up year-on-year, accounted for 45.1% (vs.

GaN is, without doubt, the most important and pervasive material within the family of compound semiconductors. It’s initially enjoyed tremendous success within the optoelectronics domain, where it’s ...

A particularly promising candidate for raising the ceiling that limits what’s possible is a variant of the nitride-based HEMT that utilises indium-based nitride semiconductors in the barrier layer – ...

Think of an application for SiC power electronics and you’ll probably think of electric vehicles (EVs). After all, it’s the battery-powered automobile that’s driving the growth in sales of SiC MOSFETs ...

Northrop Grumman is one of the companies selected to receive an award from the Defense Microelectronics Activity (DMEA) for a contracting resource. This tool has an award ceiling of $25 billion and ...

Building on decades of experience in supporting epitaxy, k-Space is now helping engineers to grow an even widening palette of materials and unlock the benefits that are realised with AI.

Introducing a HfO 2 gate dielectric improves the vertical GaN transistor, boosting its drain current density and its breakdown voltage. The lateral GaN HEMT is without doubt a great success, ...