Abstract: This paper compares the switching performance of two state-of-the-art Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) utilising the Double Pulse Test ...
Maintaining the robustness of the gate oxide is a prerequisite for the on-orbit application of SiC MOSFETs. Recent research has demonstrated that the oxide undergoes premature breakdown within the ...
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