Physicists found why holes move slower than electrons in silicon: not defects, but higher intrinsic mass, supporting ...
Abstract: The silicon carbide (SiC) metal oxide semiconductor field effect transistors (MOSFETs) under real-world operating conditions contends with multistress scenarios, involving thermal, ...
Abstract: The split-gate trench (SGT) MOSFET is a vertical power device having a separate field plate (FP) inside a deep trench. This design increases the breakdown voltage (BV) via the reduced ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results